Gechi 6-Inch N-Type Silicon Carbide (SiC) Ingot & Wafer
Premium Substrates for Advanced Compound Semiconductor Applications

Gechi specializes in high-quality compound semiconductor materials, offering both 6-inch N-Type Silicon Carbide (SiC) ingots and wafers designed to meet the demanding requirements of high-power, high-frequency, and high-temperature electronic devices. With stringent quality controls and advanced manufacturing, our products ensure excellent crystal integrity, electrical performance, and surface precision.

6-Inch N-Type Silicon Carbide Ingot
Our SiC ingots feature ultra-low micropipe density, precise crystal orientation, and stable resistivity, making them ideal for high-performance device fabrication. Manufactured with rigorous quality standards, these ingots exhibit no cracks, hexagonal plate defects, or polytype inclusions. They are available in production and dummy grades with thicknesses greater than 8 mm and 5 mm, respectively.

6-Inch N-Type Silicon Carbide Wafer
Gechi’s wafers are sliced from high-grade ingots and polished to meet strict flatness, roughness, and defect criteria. They offer ultra-low micropipe densities, consistent resistivity, and excellent surface quality, including minimal scratches and edge chips. Both production and dummy grades are available to accommodate various application needs. The wafers maintain tight tolerances on thickness, orientation, and flat length to ensure compatibility with advanced semiconductor processes.

develop the GaN leading technology and provide excellent service


Gallium Nitride (GaN) on Si Epitaxial Wafer
6″ GaN on Si epitaxial wafer

GaN Chips
GaN Chips

GaN FET
Small Current
Medium Current
High Current

GaN PD Charger

Chemical Anti-static Coati

CES® connects innovators, decision-makers, media, influencers, visionaries, and potential customers across the entire tech ecosystem.