GeChi Compound Semiconductor Co., Ltd.
Update：2026/08/06
Industries
Main Industry
Hardware
Main Product/Service
Gechi 6-Inch N-Type Silicon Carbide (SiC) Ingot & Wafer
Premium Substrates for Advanced Compound Semiconductor Applications
Gechi specializes in high-quality compound semiconductor materials, offering both 6-inch N-Type Silicon Carbide (SiC) ingots and wafers designed to meet the demanding requirements of high-power, high-frequency, and high-temperature electronic devices. With stringent quality controls and advanced manufacturing, our products ensure excellent crystal integrity, electrical performance, and surface precision.
6-Inch N-Type Silicon Carbide Ingot
Our SiC ingots feature ultra-low micropipe density, precise crystal orientation, and stable resistivity, making them ideal for high-performance device fabrication. Manufactured with rigorous quality standards, these ingots exhibit no cracks, hexagonal plate defects, or polytype inclusions. They are available in production and dummy grades with thicknesses greater than 8 mm and 5 mm, respectively.
6-Inch N-Type Silicon Carbide Wafer
Gechi’s wafers are sliced from high-grade ingots and polished to meet strict flatness, roughness, and defect criteria. They offer ultra-low micropipe densities, consistent resistivity, and excellent surface quality, including minimal scratches and edge chips. Both production and dummy grades are available to accommodate various application needs. The wafers maintain tight tolerances on thickness, orientation, and flat length to ensure compatibility with advanced semiconductor processes.
Premium Substrates for Advanced Compound Semiconductor Applications
Gechi specializes in high-quality compound semiconductor materials, offering both 6-inch N-Type Silicon Carbide (SiC) ingots and wafers designed to meet the demanding requirements of high-power, high-frequency, and high-temperature electronic devices. With stringent quality controls and advanced manufacturing, our products ensure excellent crystal integrity, electrical performance, and surface precision.
6-Inch N-Type Silicon Carbide Ingot
Our SiC ingots feature ultra-low micropipe density, precise crystal orientation, and stable resistivity, making them ideal for high-performance device fabrication. Manufactured with rigorous quality standards, these ingots exhibit no cracks, hexagonal plate defects, or polytype inclusions. They are available in production and dummy grades with thicknesses greater than 8 mm and 5 mm, respectively.
6-Inch N-Type Silicon Carbide Wafer
Gechi’s wafers are sliced from high-grade ingots and polished to meet strict flatness, roughness, and defect criteria. They offer ultra-low micropipe densities, consistent resistivity, and excellent surface quality, including minimal scratches and edge chips. Both production and dummy grades are available to accommodate various application needs. The wafers maintain tight tolerances on thickness, orientation, and flat length to ensure compatibility with advanced semiconductor processes.
Founded Year
2022
Unified Business No.
90282276
Status
Active
Number of Employees
0
Total Paid-in
Capital
800,000,000 (NT$)
Location of Company
Taiwan
, Taoyuan City
Information such as company name, company status, responsible person, year of establishment, paid-in capital, and registered address is sourced from the Commercial and Industrial Registration Office of the Ministry of Economic Affairs; listing status includes emerging stock, M&A, and IPO; overseas development is provided by the startup itself.
Notice: This data is compiled from public sources for reference only. We have no direct affiliation with the company and are not their contact person.
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About the Company
GeChi Compound Semiconductor (GCCS) is a Taiwan-based SiC crystal growth leader, commanding over 50% of local capacity. Since 2022, we have mass-produced 6- and 8-inch wafers with a breakthrough in 12-inch monocrystalline SiC — delivering high-yield, cost-effective solutions for EV, AI data centers, and renewable energy.
