Process Development of Novel Graphene Materials
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1. Low-Temperature Epitaxy Technology: This technology utilizes physical sputtering, commonly known as vacuum sputtering. It uses an electric field to dissociate the working gas to generate plasma, which is then accelerated to impact the target material, sputtering the material from the target onto the substrate. Through appropriate technology and equipment, it can produce excellent thin-film chemical reactions and high-quality epitaxial thin films.
2. Self-Compensating Film Thickness Technology: In sputtering epitaxy technology, the sputtering effect generated by the plasma impacting the target material keeps the material ejection angle nearly constant. Therefore, by optimizing parameters such as the working distance, the relative position of the target and substrate, and substrate rotation, a highly uniform thin-film thickness can be achieved across 8 to 12-inch wafer sizes, with a thickness variation of only 1% between the center and the edge of the wafer.
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1. Chemistry
2. Engineering
3. Semiconductor Consumables

SEMINC Silicon Nitride Plates(Si3N4)
Using ultra-pure silicon nitride powder as raw material, combined with unique sintering technology, it can perfectly exert the characteristics of the material. Physical properties such as bending strength, thermal cond